- Mounting Type :
- Operating Temperature :
- Part Status :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
-
- 2 mOhm @ 100A, 10V (1)
- 2.35 mOhm @ 75A, 10V (1)
- 2.8 mOhm @ 100A, 10V (1)
- 200 mOhm @ 16.5A, 10V (1)
- 200 mOhm @ 19A, 10V (1)
- 23 mOhm @ 35A, 10V (2)
- 3.4 mOhm @ 75A, 10V (2)
- 390 mOhm @ 12A, 10V (1)
- 45 mOhm @ 500mA, 10V (2)
- 5 mOhm @ 15A, 10V (1)
- 75 mOhm @ 29A, 10V (2)
- 75 mOhm @ 36.5A, 10V (2)
- 85 mOhm @ 27.5A, 10V (1)
- 85 mOhm @ 500mA, 10V (3)
- Applied Filters :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 60V 3.6A 1212-8 | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | P-Channel | 30V | 6000pF @ 15V | 3.5W (Ta), 7.8W (Tc) | 29A (Tc) | 4.5V, 10V | 5 mOhm @ 15A, 10V | 2.5V @ 250µA | 195nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 60V 103A TO220 | TO-220-3 Full Pack | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220 Full Pack | N-Channel | 60V | 6600pF @ 48V | 75W (Tc) | 86A (Tc) | 10V | 3.4 mOhm @ 75A, 10V | 4V @ 150µA | 195nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 60V 120A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | N-Channel | 60V | 15750pF @ 25V | 188W (Tc) | 120A (Tc) | 10V | 2.8 mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 60V 75A TO-220AB | TO-220-3 | HEXFET® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220AB | N-Channel | 60V | 6600pF @ 48V | 300W (Tc) | 75A (Tc) | 10V | 3.4 mOhm @ 75A, 10V | 4V @ 150µA | 195nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 100V D2PAK-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™-5 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | N-Channel | 100V | 840pF @ 50V | 313W (Tc) | 120A (Tc) | 10V | 2 mOhm @ 100A, 10V | 4.1V @ 270µA | 195nC @ 10V | ±20V | - | |||||
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Microsemi Corporation | MOSFET N-CH 600V 73A TO-264MAX | TO-264-3, TO-264AA | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 264 MAX™ [L2] | N-Channel | 600V | 8930pF @ 25V | 893W (Tc) | 73A (Tc) | 10V | 75 mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 300V 40A D3PAK | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | - | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | D3 [S] | N-Channel | 300V | 4950pF @ 25V | - | 40A (Tc) | - | 85 mOhm @ 500mA, 10V | - | 195nC @ 10V | - | - | ||||
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Microsemi Corporation | MOSFET N-CH 300V 40A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-247 [B] | N-Channel | 300V | 4950pF @ 25V | 300W (Tc) | 40A (Tc) | 10V | 85 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 58A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 600V | 8930pF @ 25V | 595W (Tc) | 58A (Tc) | 10V | 75 mOhm @ 29A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 73A TO-264MAX | TO-264-3, TO-264AA | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | 264 MAX™ [L2] | N-Channel | 600V | 8930pF @ 25V | 893W (Tc) | 73A (Tc) | 10V | 75 mOhm @ 36.5A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 38A T-MAX | TO-247-3 Variant | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | T-MAX™ [B2] | N-Channel | 800V | 5200pF @ 25V | 694W (Tc) | 38A (Tc) | 10V | 200 mOhm @ 19A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 200V | 4860pF @ 25V | 300W (Tc) | 56A (Tc) | 10V | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 300V 40A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 300V | 4950pF @ 25V | 300W (Tc) | 40A (Tc) | 10V | 85 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 200V 56A TO-247 | TO-247-3 | POWER MOS V® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 200V | 4860pF @ 25V | 300W (Tc) | 56A (Tc) | 10V | 45 mOhm @ 500mA, 10V | 4V @ 1mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 800V 33A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 800V | 5200pF @ 25V | 520W (Tc) | 33A (Tc) | 10V | 200 mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | - | ||||
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Microsemi Corporation | MOSFET N-CH 600V 58A SOT-227 | SOT-227-4, miniBLOC | POWER MOS 7® | Tube | MOSFET (Metal Oxide) | Chassis Mount | -55°C ~ 150°C (TJ) | Active | ISOTOP® | N-Channel | 600V | 8930pF @ 25V | 595W (Tc) | 58A (Tc) | 10V | 75 mOhm @ 29A, 10V | 5V @ 5mA | 195nC @ 10V | ±30V | - | ||||
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ON Semiconductor | MOSFET N-CH 100V 70A TO-3 | TO-3P-3, SC-65-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-3P | N-Channel | 100V | 4870pF @ 25V | 300W (Tc) | 70A (Tc) | 10V | 23 mOhm @ 35A, 10V | 4V @ 250µA | 195nC @ 10V | - | - | ||||
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ON Semiconductor | MOSFET N-CH 75V 120A TO-220-3 | TO-220-3 | PowerTrench® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | N-Channel | 75V | 13765pF @ 37.5V | 245W (Tc) | 120A (Tc) | 10V | 2.35 mOhm @ 75A, 10V | 3.8V @ 250µA | 195nC @ 10V | ±20V | - | ||||
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ON Semiconductor | MOSFET N-CH 100V 70A TO-3 | TO-3P-3, SC-65-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-3P | N-Channel | 100V | 4870pF @ 25V | 300W (Tc) | 70A (Tc) | 10V | 23 mOhm @ 35A, 10V | 4V @ 250µA | 195nC @ 10V | - | - | ||||
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IXYS-RF | MOSFET N-CH 1000V 24A TO264 | TO-264-3, TO-264AA | HiPerRF™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-264 (IXFK) | N-Channel | 1000V | 6600pF @ 25V | 560W (Tc) | 24A (Tc) | 10V | 390 mOhm @ 12A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | - | ||||
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IXYS-RF | MOSFET N-CH 500V 55A PLUS247 | TO-247-3 | HiPerRF™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PLUS247™-3 | N-Channel | 500V | 6700pF @ 25V | 560W (Tc) | 55A (Tc) | 10V | 85 mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | - |