- Part Status :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 55V 53A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247AC | N-Channel | 55V | 1500pF @ 25V | 120W (Tc) | 53A (Tc) | 10V | 20 mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-247AC | N-Channel | 55V | 1500pF @ 25V | 120W (Tc) | 53A (Tc) | 10V | 20 mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 53A TO-247AC | TO-247-3 | HEXFET® | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-247AC | N-Channel | 55V | 1500pF @ 25V | 120W (Tc) | 53A (Tc) | 10V | 20 mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | - |