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Supplier Device Package :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STP95N2LH5
RFQ
STMicroelectronics MOSFET N-CH 25V 80A TO-220 TO-220-3 STripFET™ V Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete TO-220AB N-Channel 25V 1817pF @ 25V 80W (Tc) 80A (Tc) 5V, 10V 4.9 mOhm @ 40A, 10V 1V @ 250µA 13.4nC @ 5V ±22V -
STU95N2LH5
RFQ
STMicroelectronics MOSFET N-CH 25V 80A TO220-3 TO-251-3 Short Leads, IPak, TO-251AA STripFET™ V Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 175°C (TJ) Obsolete I-PAK N-Channel 25V 1817pF @ 25V 70W (Tc) 80A (Tc) 5V, 10V 4.9 mOhm @ 40A, 10V 1V @ 250µA 13.4nC @ 5V ±25V -
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