- Manufacture :
- Package / Case :
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- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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ON Semiconductor | MOSFET P-CH 30V 11A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOIC | P-Channel | 30V | 3000pF @ 15V | 2.5W (Ta) | 11A (Ta) | 4.5V, 10V | 14 mOhm @ 11A, 10V | 3V @ 250µA | 42nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET P-CH 20V 6-MICROFET | 6-WDFN Exposed Pad | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-MicroFET (2x2) | P-Channel | 20V | 2015pF @ 10V | 2.4W (Ta) | 7.8A (Ta) | 1.8V, 4.5V | 24 mOhm @ 7.8A, 5V | 1.5V @ 250µA | 42nC @ 5V | ±8V | - | |||||
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Nexperia USA Inc. | MOSFET N-CH 30V 100A LFPAK | SC-100, SOT-669 | TrenchMOS™ | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | LFPAK56, Power-SO8 | N-Channel | 30V | 4100pF @ 10V | 62.5W (Tc) | 100A (Tc) | 4.5V, 10V | 3.2 mOhm @ 25A, 10V | 3V @ 1mA | 42nC @ 5V | ±20V | - |