- Series :
- Mounting Type :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 200V 9A TO-220-5 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | N-Channel | 600V | 2700pF @ 25V | 340W (Tc) | 17A (Tc) | 10V | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 20V 36A I-PAK | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | N-Channel | 600V | 2700pF @ 25V | 340W (Tc) | 17A (Tc) | 10V | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 900V 1.2A TO220FP | 8-PowerTDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerPAK® 8 x 8 | N-Channel | 650V | 2404pF @ 100V | 156W (Tc) | 20.3A (Tc) | 10V | 170 mOhm @ 11A, 10V | 4V @ 250µA | 99nC @ 10V | ±30V | |||||
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Infineon Technologies | MOSFET N-CH 40V 100A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-Pak | N-Channel | 40V | 3171pF @ 25V | 99W (Tc) | 100A (Tc) | 10V | 3.1 mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | |||||
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ON Semiconductor | MOSFET N-CH 60V 120A TO-220-3 | TO-220-3 | PowerTrench® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | TO-220-3 | N-Channel | 60V | 8030pF @ 30V | 205W (Tc) | 120A (Tc) | 10V | 3.1 mOhm @ 100A, 10V | 4V @ 250µA | 99nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 200V 62A TO-220 | TO-220-3 | PowerTrench® | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 200V | 7230pF @ 25V | 260W (Tc) | 62A (Tc) | 10V | 27 mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | ||||
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ON Semiconductor | MOSFET N-CH 200V 62A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D²PAK | N-Channel | 200V | 7230pF @ 25V | 260W (Tc) | 62A (Tc) | 10V | 27 mOhm @ 31A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | |||||
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Infineon Technologies | MOSFET N-CH 85V 95A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D²PAK (TO-263AB) | N-Channel | 85V | 6690pF @ 40V | 167W (Tc) | 95A (Tc) | 10V | 8.2 mOhm @ 95A, 10V | 4V @ 130µA | 99nC @ 10V | ±20V | |||||
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | N-Channel | 600V | 2700pF @ 25V | 340W (Tc) | 17A (Tc) | 10V | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 17A TO-220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220AB | N-Channel | 600V | 2700pF @ 25V | 340W (Tc) | 17A (Tc) | 10V | 420 mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V |