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- Input Capacitance (Ciss) (Max) @ Vds :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Diodes Incorporated | MOSFET P-CH 20V 18A PWRDI3333-8 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | P-Channel | 20V | 3350pF @ 10V | 900mW (Ta) | 12.7A (Ta), 42A (Tc) | 2.5V, 4.5V | 9.5 mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 103nC @ 10V | ±10V | - | |||||
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Diodes Incorporated | MOSFET P-CH 20V 50A POWERDI3333 | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | P-Channel | 20V | 3350pF @ 10V | 2W (Ta) | 50A (Tc) | 2.5V, 4.5V | 9.5 mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 103nC @ 10V | ±10V | - | |||||
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Diodes Incorporated | MOSFET NCH 60V 9.5A POWERDI | 8-PowerVDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | P-Channel | 20V | 3350pF @ 10V | 2W (Ta) | 50A (Tc) | 2.5V, 4.5V | 9.5 mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 103nC @ 10V | ±10V | - | |||||
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Diodes Incorporated | MOSFET N-CH 80V 50A TO252 | 8-PowerWDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PowerDI3333-8 | P-Channel | 20V | 3350pF @ 10V | 900mW (Ta) | 12.7A (Ta), 42A (Tc) | 2.5V, 4.5V | 9.5 mOhm @ 3.6A, 4.5V | 1.2V @ 250µA | 103nC @ 10V | ±10V | - | |||||
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Infineon Technologies | MOSFET N-CH 600V 20A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO247-3 | N-Channel | 600V | 3000pF @ 25V | 208W (Tc) | 20A (Tc) | 10V | 190 mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 20A TO-220AB | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | PG-TO220-3-1 | N-Channel | 650V | 3000pF @ 25V | 208W (Tc) | 20A (Tc) | 10V | 190 mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | ±20V | - | ||||
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NXP USA Inc. | MOSFET N-CH 60V 75A TO-220F | TO-220-3 Full Pack, Isolated Tab | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | TO-220F | N-Channel | 60V | 5494pF @ 25V | 55W (Tc) | 75A (Tc) | 10V | 4 mOhm @ 25A, 10V | 4V @ 1mA | 103nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 55V 77A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO263-3-2 | N-Channel | 55V | 5335pF @ 25V | 107W (Tc) | 77A (Tc) | 10V | 8.8 mOhm @ 39A, 10V | 4V @ 55µA | 103nC @ 10V | ±20V | - |