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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
TD2108W33E
RFQ
Diodes Incorporated MOSFET P-CH 20V 3.3A 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 60V 1522pF @ 30V 1.2W (Ta) 10.4A (Ta) 4.5V, 10V 11 mOhm @ 10A, 10V 2V @ 250µA 22.2nC @ 10V ±20V
DMT6012LSS-13
RFQ
Diodes Incorporated MOSFET N-CH 60V8SOIC 8-SOIC (0.154", 3.90mm Width) - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO N-Channel 60V 1522pF @ 30V 1.2W (Ta) 10.4A (Ta) 4.5V, 10V 11 mOhm @ 10A, 10V 2V @ 250µA 22.2nC @ 10V ±20V
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