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Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PL-2301
Per Unit
$0.0859
RFQ
Diodes Incorporated MOSFET N-CH 20V 0.76A 3DFN TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 N-Channel 30V 495pF @ 15V 770mW (Ta) 3.6A (Ta) 4.5V, 10V 50 mOhm @ 3.6A, 10V 2V @ 250µA 11.2nC @ 10V ±20V -
PAM3130ALA150
Per Unit
$0.0720
RFQ
Diodes Incorporated MOSFET P-CH 30V SOT23 TO-236-3, SC-59, SOT-23-3 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 N-Channel 30V 495pF @ 15V 770mW (Ta) 3.6A (Ta) 4.5V, 10V 50 mOhm @ 3.6A, 10V 2V @ 250µA 11.2nC @ 10V ±20V -
MC74VHC1G126DFT1G
Per Unit
$1.6200
RFQ
ON Semiconductor MOSFET N-CH 150V 10A TO-220F TO-220-3 Full Pack PowerTrench® Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active TO-220F-3 N-Channel 150V 765pF @ 75V 21W (Tc) 10A (Tc) 10V 77 mOhm @ 10A, 10V 4V @ 250µA 11.2nC @ 10V ±20V -
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