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Package / Case :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPD031N03L
Per Unit
$12.6800
RFQ
Infineon Technologies MOSFET N-CH 650V 76A TO247-3 TO-247-3 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-3 N-Channel 650V 5243pF @ 400V 255W (Tc) 76A (Tc) 10V 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V ±20V -
FP6378
Per Unit
$12.7800
RFQ
Infineon Technologies MOSFET TO247-4 TO-247-4 CoolMOS™ P7 Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Active PG-TO247-4 N-Channel 600V 5243pF @ 400V 255W (Tc) 76A (Tc) 10V 37 mOhm @ 29.5A, 10V 4V @ 1.48mA 121nC @ 10V ±20V -
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