- Package / Case :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Diodes Incorporated | MOSFET N CH 30V 7.5A POWERDI | 3-XFDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X2-DFN1006-3 | P-Channel | 30V | 76pF @ 15V | 460mW (Ta) | 540mA (Ta) | 1.8V, 4.5V | 1 Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 0.9nC @ 4.5V | ±8V | |||||
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Diodes Incorporated | MOSFET N-CH 30V 2.6A SOT-323 | 3-UFDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-DFN1006-3 | N-Channel | 60V | 64pF @ 25V | 500mW (Ta) | 320mA (Ta) | 1.5V, 4V | 2 Ohm @ 100mA, 4V | 1V @ 250µA | 0.9nC @ 4.5V | ±20V | |||||
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Diodes Incorporated | MOSFET N-CH 28V 3.2A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | P-Channel | 30V | 76pF @ 15V | 450mW (Ta) | 530mA (Ta) | 1.8V, 4.5V | 1 Ohm @ 400mA, 4.5V | 1.1V @ 250µA | 0.9nC @ 4.5V | ±8V |