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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SCD12-W-ME-N1
Per Unit
$0.1571
RFQ
Diodes Incorporated MOSFET P-CH 20V 4.2A TSOT-26 6-UDFN Exposed Pad Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) N-Channel 12V 995pF @ 6V 700mW (Ta) 12.2A (Ta) 2.5V, 4.5V 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V ±8V -
PT6382-LQ
RFQ
Diodes Incorporated MOSFET P-CH 20V 3A SOT23 6-UDFN Exposed Pad Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2020-6 (Type F) N-Channel 12V 995pF @ 6V 700mW (Ta) 12.2A (Ta) 2.5V, 4.5V 8 mOhm @ 5A, 4.5V 1V @ 250µA 23.4nC @ 8V ±8V -
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