- Package / Case :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET N-CH 60V 4.4A TO236 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | P-Channel | 20V | 1160pF @ 10V | 960mW (Ta), 1.7W (Tc) | 5.3A (Tc) | 1.8V, 4.5V | 39 mOhm @ 4.1A, 4.5V | 1V @ 250µA | 36nC @ 8V | ±8V | |||||
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Vishay Siliconix | MOSFET N-CH 20V SC-89 | TO-236-3, SC-59, SOT-23-3 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-236 | P-Channel | 20V | - | 1W (Ta), 1.7W (Tc) | 5.9A (Tc) | 1.8V, 4.5V | 32 mOhm @ 4A, 4.5V | 1V @ 250µA | 36nC @ 8V | ±8V | |||||
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Vishay Siliconix | MOSFET N-CH 30V 12A SC-70-6L | 6-TSSOP, SC-88, SOT-363 | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SC-70-6 (SOT-363) | P-Channel | 12V | - | 1.6W (Ta), 2.8W (Tc) | 4A (Tc) | 1.5V, 4.5V | 34 mOhm @ 5.5A, 4.5V | 1V @ 250µA | 36nC @ 8V | ±10V |