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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
NCP1216AP65G--
RFQ
ON Semiconductor MOSFET P-CH 30V 2.4A SSOT6 SOT-23-6 Thin, TSOT-23-6 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SuperSOT™-6 P-Channel 30V 290pF @ 15V 1.6W (Ta) 2.4A (Ta) 4.5V, 10V 110 mOhm @ 3.1A, 10V 3V @ 250µA 20nC @ 10V -20V -
NDC652P
RFQ
ON Semiconductor MOSFET P-CH 30V 2.4A SSOT6 SOT-23-6 Thin, TSOT-23-6 - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete SuperSOT™-6 P-Channel 30V 290pF @ 15V 1.6W (Ta) 2.4A (Ta) 4.5V, 10V 110 mOhm @ 3.1A, 10V 3V @ 250µA 20nC @ 10V -20V -
CSD25501F3
Per Unit
$0.1047
RFQ
Texas Instruments 20V P CH MOSFET 3-XFLGA FemtoFET™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 3-LGA (0.73x0.64) P-Channel 20V 385pF @ 10V 500mW (Ta) 3.6A (Ta) 1.8V, 4.5V 76 mOhm @ 400mA, 4.5V 1.05V @ 250µA 1.33nC @ 4.5V -20V -
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