- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Vgs (Max) :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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EPC | TRANS GAN 40V 33A BUMPED DIE | eGaN® | GaNFET (Gallium Nitride) | Surface Mount | -40°C ~ 150°C (TJ) | Discontinued at Digi-Key | Die Outline (11-Solder Bar) | N-Channel | 40V | 1200pF @ 20V | 33A (Ta) | 5V | 4 mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6nC @ 5V | +6V, -5V | - | |||||
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EPC | TRANS GAN 40V 10A BUMPED DIE | eGaN® | GaNFET (Gallium Nitride) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Die Outline (5-Solder Bar) | N-Channel | 40V | 300pF @ 20V | 10A (Ta) | 5V | 16 mOhm @ 10A, 5V | 2.5V @ 2mA | 2.5nC @ 5V | +6V, -4V | - | |||||
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EPC | TRANS GAN 100V 1A BUMPED DIE | eGaN® | GaNFET (Gallium Nitride) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Die | N-Channel | 100V | 90pF @ 50V | 1A (Ta) | 5V | 65 mOhm @ 1A, 5V | 2.5V @ 600µA | 0.91nC @ 5V | +6V, -4V | - |