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Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
IPL60R2K1C6S
Per Unit
$0.2737
RFQ
Infineon Technologies MOSFET N-CH 750V 7.4A SOT223 TO-261-4, TO-261AA - MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-SOT223 N-Channel 750V 328pF @ 100V 5W (Tc) 7.4A (Tc) 10V 1 Ohm @ 1.5A, 10V 3.5V @ 150µA 14.9nC @ 10V ±20V
IPJ-P6005-X2AT
Per Unit
$0.2379
RFQ
Infineon Technologies MOSFET N-CHANNEL 750V 4A SOT223 SOT-223-3 - MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active PG-SOT223 N-Channel 750V 163pF @ 100V 5W (Tc) 4A (Tc) 10V 2.1 Ohm @ 1A, 10V 3.5V @ 70µA 7.8nC @ 10V ±20V
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