- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 40V 21A 8TSDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-8-FL | N-Channel | 40V | 2300pF @ 20V | 2.1W (Ta), 63W (Tc) | 21A (Ta), 40A (Tc) | 4.5V, 10V | 2.8 mOhm @ 20A, 10V | - | 32nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 40V 23A 8TDSON | 8-PowerTDFN | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | N-Channel | 40V | 2300pF @ 20V | 2.5W (Ta), 63W (Tc) | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.6 mOhm @ 50A, 10V | 2V @ 250µA | 32nC @ 10V | ±20V | |||||
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ON Semiconductor | TRENCH 6 40V FET | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | N-Channel | 40V | 2300pF @ 20V | 66W (Tc) | 110A (Tc) | 10V | 3.5 mOhm @ 50A, 10V | 4V @ 250µA | 34.3nC @ 10V | ±20V | |||||
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ON Semiconductor | TRENCH 6 40V FET | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DPAK | N-Channel | 40V | 2300pF @ 20V | 66W (Tc) | 110A (Tc) | 10V | 3.5 mOhm @ 50A, 10V | 4V @ 250µA | 34.3nC @ 10V | ±20V |