- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 30V 27A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | N-Channel | 200V | 328pF @ 100V | 2.5W (Ta), 42.5W (Tc) | 1.5A (Ta), 6A (Tc) | 10V | 400 mOhm @ 3A, 10V | 3.7V @ 250µA | 115nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | N-Channel | 650V | 328pF @ 100V | 34.7W (Tc) | 4.2A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 650V | 328pF @ 100V | 37W (Tc) | 4.5A (Tc) | 10V | 950 mOhm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 650V TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 650V | 328pF @ 100V | 68W (Tc) | 7.2A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3nC @ 10V | ±20V | Super Junction | |||||
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Infineon Technologies | MOSFET N-CH 750V 7.4A SOT223 | TO-261-4, TO-261AA | - | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 750V | 328pF @ 100V | 5W (Tc) | 7.4A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 700V 7.4A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 700V | 328pF @ 100V | 68W (Tc) | 7.4A (Tc) | 10V | 950 mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | Super Junction | |||||
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Central Semiconductor Corp | MOSFET N-CH 4A 600V DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | N-Channel | 600V | 328pF @ 100V | 38W (Tc) | 4A (Tc) | 10V | 950 mOhm @ 2A, 10V | 4V @ 250µA | 11.59nC @ 10V | 30V | - | |||||
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Central Semiconductor Corp | MOSFET N-CH 4A 600V DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | DPAK | N-Channel | 600V | 328pF @ 100V | 38W (Tc) | 4A (Tc) | 10V | 950 mOhm @ 2A, 10V | 4V @ 250µA | 11.59nC @ 10V | 30V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 200V 6A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252, (D-Pak) | N-Channel | 200V | 328pF @ 100V | 2.5W (Ta), 42.5W (Tc) | 1.5A (Ta), 6A (Tc) | 10V | 400 mOhm @ 3A, 10V | 3.7V @ 250µA | 115nC @ 10V | ±20V | - |