- Part Status :
- Supplier Device Package :
- FET Type :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 55V 42A I-PAK | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | P-Channel | 30V | 1110pF @ 25V | 2.5W (Ta) | 9.2A (Ta) | 4.5V, 10V | 19.4 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | P-Channel | 30V | 1110pF @ 25V | 2.5W (Ta) | 9.2A (Ta) | 10V, 20V | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | ±25V | - | |||||
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ON Semiconductor | MOSFET N-CH 60V 30A D-PAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252 | N-Channel | 60V | 1110pF @ 25V | 3.2W (Ta), 50W (Tc) | 30A (Tc) | 6V, 10V | 27 mOhm @ 9A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | |||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | Schottky Diode (Isolated) | ||||
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Infineon Technologies | MOSFET P-CH 40V 3.4A 6-TSOP | SOT-23-6 Thin, TSOT-23-6 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | - | Obsolete | Micro6™(TSOP-6) | P-Channel | 40V | 1110pF @ 25V | 2W (Ta) | 3.4A (Ta) | 4.5V, 10V | 112 mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | - | ||||
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STMicroelectronics | MOSFET N-CH 600V 7A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SuperFREDmesh™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | N-Channel | 600V | 1110pF @ 25V | 125W (Tc) | 7A (Tc) | 10V | 950 mOhm @ 3.5A, 10V | 4.5V @ 100µA | 53nC @ 10V | ±30V | - |