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3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
PTFB241402F V1
RFQ
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP SOT-23-6 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) N-Channel 20V 300pF @ 15V 1.7W (Ta) 3.2A (Ta) 2.7V, 4.5V 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V ±12V -
BUZ335
Per Unit
$0.1918
RFQ
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP SOT-23-6 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro6™(TSOP-6) N-Channel 20V 300pF @ 15V 1.7W (Ta) 3.2A (Ta) 2.7V, 4.5V 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V ±12V -
IRLMS1902TR
RFQ
Infineon Technologies MOSFET N-CH 20V 3.2A 6-TSOP SOT-23-6 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro6™(TSOP-6) N-Channel 20V 300pF @ 15V 1.7W (Ta) 3.2A (Ta) 2.7V, 4.5V 100 mOhm @ 2.2A, 4.5V 700mV @ 250µA 7nC @ 4.5V ±12V -
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