Chat with us, powered by LiveChat
Build a global manufacturer and supplier trusted trading platform.
Packaging :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TDA4321
RFQ
Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 100V 3550pF @ 50V 190W (Tc) 73A (Tc) 10V 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V ±20V -
TDA4310XS
RFQ
Infineon Technologies MOSFET N-CH 100V 96A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 100V 3550pF @ 50V 190W (Tc) 73A (Tc) 10V 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V ±20V -
IRFS4610TRRPBF
RFQ
Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 100V 3550pF @ 50V 190W (Tc) 73A (Tc) 10V 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V ±20V -
IRFS4610PBF
RFQ
Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 100V 3550pF @ 50V 190W (Tc) 73A (Tc) 10V 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V ±20V -
IRFS4610
RFQ
Infineon Technologies MOSFET N-CH 100V 73A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D2PAK N-Channel 100V 3550pF @ 50V 190W (Tc) 73A (Tc) 10V 14 mOhm @ 44A, 10V 4V @ 100µA 140nC @ 10V ±20V -
Page 1 / 1