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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
SGM8538YTS14G/TR
Per Unit
$0.6275
RFQ
Diodes Incorporated MOSFET BVDSS: 501V 650V TO251 3-XDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Preliminary X2-DFN2015-3 P-Channel 20V 634pF @ 10V 670mW (Ta) 4.7A (Ta) 1.5V, 4.5V 45 mOhm @ 4A, 4.5V 1V @ 250µA 6.8nC @ 4.5V ±8V
PT5110E23C-18
Per Unit
$0.0647
RFQ
Diodes Incorporated MOSFET N-CH 12V 0.5A X2DFN-3 4-UFBGA, WLBGA Automotive, AEC-Q101 MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active X2-WLB0808-4 P-Channel 12V 820pF @ 6V 670mW (Ta) 2.5A (Ta) 1.3V, 4.5V 83 mOhm @ 3A, 4.5V 800mV @ 250µA 14nC @ 4.5V ±8V
DMP2045UFY4-7
RFQ
Diodes Incorporated MOSFET P-CH 16V DFN-3 3-XDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Preliminary X2-DFN2015-3 P-Channel 20V 634pF @ 10V 670mW (Ta) 4.7A (Ta) 1.5V, 4.5V 45 mOhm @ 4A, 4.5V 1V @ 250µA 6.8nC @ 4.5V ±8V
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