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Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
STU458S
RFQ
Diodes Incorporated MOSFET N CH 30V 10.3A 8-SO 3-UFDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 3-DFN1006 (1.0x0.6) P-Channel 50V 29pF @ 4V 425mW (Ta) 200mA (Ta) 2.5V, 4V 6 Ohm @ 100mA, 4V 1V @ 250µA - ±8V
PT5108E23E-30
RFQ
Diodes Incorporated MOSFET N-CH 30V 7.5A PWRDI3333-8 3-UFDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 3-DFN1006 (1.0x0.6) P-Channel 50V 50.54pF @ 25V 425mW (Ta) 200mA (Ta) 2.5V, 4V 6 Ohm @ 100mA, 4V 1.2V @ 250µA 0.58nC @ 4V ±8V
PT2272A-L2
Per Unit
$0.1090
RFQ
Diodes Incorporated MOSFET P-CH 20V 2.5A SOT23 3-UFDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 3-DFN1006 (1.0x0.6) P-Channel 50V 50.54pF @ 25V 425mW (Ta) 200mA (Ta) 2.5V, 4V 6 Ohm @ 100mA, 4V 1.2V @ 250µA 0.58nC @ 4V ±8V
DMP57D5UFB-7
RFQ
Diodes Incorporated MOSFET P-CH 50V 200MA 3-DFN 3-UFDFN - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 3-DFN1006 (1.0x0.6) P-Channel 50V 29pF @ 4V 425mW (Ta) 200mA (Ta) 2.5V, 4V 6 Ohm @ 100mA, 4V 1V @ 250µA - ±8V
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