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Packaging :
Supplier Device Package :
Input Capacitance (Ciss) (Max) @ Vds :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
IPD60R360P7S
Per Unit
$2.8304
RFQ
Infineon Technologies MOSFET N-CH 600V 30A TO263 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Not For New Designs D²PAK (TO-263AB) N-Channel 600V 2127pF @ 100V 219W (Tc) 30A (Tc) 10V 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 96nC @ 10V ±20V -
LE87536NQCT
RFQ
Microsemi Corporation MOSFET N-CH 600V 30A D3PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB CoolMOS™ Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete D3Pak N-Channel 600V 2267pF @ 25V 219W (Tc) 30A (Tc) 10V 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 88nC @ 10V ±20V -
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