2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 200 D2PAK-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ 3 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | N-Channel | 200V | 650pF @ 100V | 250W (Tc) | 88A (Tc) | 10V | 11 mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 200 D2PAK-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ 3 | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TO263-3 | N-Channel | 200V | 650pF @ 100V | 250W (Tc) | 88A (Tc) | 10V | 11 mOhm @ 88A, 10V | 4.2V @ 260µA | 76nC @ 10V | ±20V | - |