- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 40V | 7330pF @ 25V | 230W (Tc) | 195A (Tc) | 10V | 1.8 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263AB | N-Channel | 40V | 7330pF @ 25V | 230W (Tc) | 195A (Tc) | 6V, 10V | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | N-Channel | 40V | 7330pF @ 25V | 230W (Tc) | 195A (Tc) | 10V | 1.8 mOhm @ 100A, 10V | 4V @ 150µA | 225nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 40V 120A TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 40V | 10740pF @ 25V | 158W (Tc) | 120A (Tc) | 10V | 1.8 mOhm @ 100A, 10V | 4V @ 110µA | 134nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N CH 40V 195A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET®, StrongIRFET™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-263AB | N-Channel | 40V | 7330pF @ 25V | 230W (Tc) | 195A (Tc) | 6V, 10V | 1.8 mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | - |