- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Alpha Omega Semiconductor Inc. | MOSFET N-CHANNEL 600V 10A TO220 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 600V | 263pF @ 100V | 83W (Tc) | 4A (Tc) | 10V | 900 mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 100V 43A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | TO-252, (D-Pak) | N-Channel | 600V | 263pF @ 100V | 56.8W (Tc) | 4A (Tc) | 10V | 900 mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 4A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 600V | 263pF @ 100V | 83W (Tc) | 4A (Tc) | 10V | 900 mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 600V 4A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | TO-252, (D-Pak) | N-Channel | 600V | 263pF @ 100V | 56.8W (Tc) | 4A (Tc) | 10V | 900 mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | ±30V | - |