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5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
SFH551/1-1V
RFQ
Infineon Technologies MOSFET N-CH 200V 9.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 200V 560pF @ 25V 86W (Tc) 9.4A (Tc) 10V 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V ±30V -
SFH4510
RFQ
Infineon Technologies MOSFET N-CH 200V 9.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 200V 560pF @ 25V 86W (Tc) 9.4A (Tc) 10V 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V ±30V -
SEC51C806-8EM
RFQ
Infineon Technologies MOSFET N-CH 200V 9.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Obsolete D-Pak N-Channel 200V 560pF @ 25V 86W (Tc) 9.4A (Tc) 10V 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V ±30V -
IPP09N03LAG
Per Unit
$0.4813
RFQ
Infineon Technologies MOSFET N-CH 200V 9.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-Pak N-Channel 200V 560pF @ 25V 86W (Tc) 9.4A (Tc) 10V 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V ±30V -
CHL8266CRT.
Per Unit
$0.4813
RFQ
Infineon Technologies MOSFET N-CH 200V 9.4A DPAK TO-252-3, DPak (2 Leads + Tab), SC-63 HEXFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D-Pak N-Channel 200V 560pF @ 25V 86W (Tc) 9.4A (Tc) 10V 380 mOhm @ 5.6A, 10V 5.5V @ 250µA 27nC @ 10V ±30V -
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