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4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
RU190N08Q
RFQ
Vishay Siliconix MOSFET P-CH 20V 1.6A 6-TSOP SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-TSOP P-Channel 20V - 1.1W (Ta) 3.9A (Ta) 2.5V, 4.5V 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V ±12V
QM2407K
RFQ
Vishay Siliconix MOSFET P-CH 20V 1.6A 6-TSOP SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-TSOP P-Channel 20V - 1.1W (Ta) 3.9A (Ta) 2.5V, 4.5V 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V ±12V
SI3867DV-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-TSOP P-Channel 20V - 1.1W (Ta) 3.9A (Ta) 2.5V, 4.5V 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V ±12V
SI3867DV-T1-E3
RFQ
Vishay Siliconix MOSFET P-CH 20V 3.9A 6-TSOP SOT-23-6 Thin, TSOT-23-6 TrenchFET® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 6-TSOP P-Channel 20V - 1.1W (Ta) 3.9A (Ta) 2.5V, 4.5V 51 mOhm @ 5.1A, 4.5V 1.4V @ 250µA 11nC @ 4.5V ±12V
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