- Packaging :
- Part Status :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | 6-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSDSON-6 | N-Channel | 30V | 600pF @ 25V | 2.1W (Ta) | 8.8A (Ta), 19A (Tc) | 4.5V, 10V | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | 6-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-TSDSON-6 | N-Channel | 30V | 600pF @ 25V | 2.1W (Ta) | 8.8A (Ta), 19A (Tc) | 4.5V, 10V | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | ±20V | - |