- Manufacture :
- Package / Case :
- Series :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Vishay Siliconix | MOSFET P-CH 30V 11.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | - | 1.4W (Ta) | 9.5A (Ta) | 4.5V, 10V | 8.5 mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | - | |||||
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Vishay Siliconix | MOSFET P-CH 30V 11.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | TrenchFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 30V | - | 1.4W (Ta) | 9.5A (Ta) | 4.5V, 10V | 8.5 mOhm @ 13.5A, 10V | 3V @ 250µA | 50nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 30V POWERDI3333-8 | 8-SOIC (0.154", 3.90mm Width) | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | N-Channel | 60V | 2107pF @ 30V | 1.9W (Ta) | 28.9A (Tc) | 4.5V, 10V | 8.5 mOhm @ 13.5A, 10V | 3V @ 250µA | 31.8nC @ 10V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 13.5A POWER56 | 8-PowerTDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (5x6) | N-Channel | 30V | 1585pF @ 15V | 2.5W (Ta), 42W (Tc) | 13.5A (Ta), 21A (Tc) | 4.5V, 10V | 8.5 mOhm @ 13.5A, 10V | 2.5V @ 250µA | 33nC @ 10V | ±20V | - |