- Manufacture :
- Package / Case :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET P-CH TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | Automotive, AEC-Q101, OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO263-3-2 | P-Channel | 40V | 6580pF @ 25V | 88W (Tc) | 80A (Tc) | 4.5V, 10V | 6.4 mOhm @ 80A, 10V | 2.2V @ 150µA | 104nC @ 10V | ±16V | ||||||
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ON Semiconductor | NMOS PWR56 100V 5.8 MOHM | 8-PowerTDFN | Automotive, AEC-Q101, PowerTrench® | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-DFN (5.1x6.3) | N-Channel | 100V | 2220pF @ 50V | 214W (Ta) | 80A (Tc) | 10V | 6.4 mOhm @ 80A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V |