- Part Status :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET P-CH 250V 0.19A SOT-89 | TO-243AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT89-4-2 | N-Channel | 240V | 97pF @ 25V | 1W (Ta) | 260mA (Ta) | 4.5V, 10V | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 | TO-243AA | SIPMOS® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT89-4-2 | N-Channel | 240V | 97pF @ 25V | 1W (Ta) | 260mA (Ta) | 4.5V, 10V | 6 Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | - |