- Operating Temperature :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 100V 1A SAWN ON FOIL | Die | OptiMOS™ | Bulk | MOSFET (Metal Oxide) | Surface Mount | - | Active | Sawn on foil | N-Channel | 100V | - | - | 1A (Tj) | 10V | 100 mOhm @ 2A, 10V | 3.5V @ 150µA | - | - | - | ||||
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Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 100V | 8410pF @ 50V | 214W (Tc) | 100A (Tc) | 6V, 10V | 4.2 mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 8TSON | 8-PowerTDFN | CoolMOS™ C6 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | Thin-PAK (5x6) | N-Channel | 650V | 328pF @ 100V | 34.7W (Tc) | 4.2A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 15nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 750V 7.4A SOT223 | TO-261-4, TO-261AA | - | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 750V | 328pF @ 100V | 5W (Tc) | 7.4A (Tc) | 10V | 1 Ohm @ 1.5A, 10V | 3.5V @ 150µA | 14.9nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CHANNEL 500V 9A SOT223 | SOT-223-3 | CoolMOS™ CE | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 500V | 342pF @ 100V | 5W (Tc) | 9A (Tc) | 13V | 650 mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 700V 12.5A SOT223 | SOT-223-3 | CoolMOS™ P7 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-SOT223 | N-Channel | 700V | 517pF @ 400V | 7.2W (Tc) | 12.5A (Tc) | 10V | 360 mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 700V 12.5A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ P7 | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 700V | 517pF @ 400V | 59.4W (Tc) | 12.5A (Tc) | 10V | 360 mOhm @ 3A, 10V | 3.5V @ 150µA | 16.4nC @ 10V | ±16V | - | |||||
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Infineon Technologies | MOSFET N-CH 700V 7.4A TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | CoolMOS™ | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-TO252-3 | N-Channel | 700V | 328pF @ 100V | 68W (Tc) | 7.4A (Tc) | 10V | 950 mOhm @ 1.5A, 10V | 3.5V @ 150µA | 15.3nC @ 10V | ±20V | Super Junction | |||||
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Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D²PAK (TO-263AB) | N-Channel | 100V | 8410pF @ 50V | 214W (Tc) | 100A (Tc) | 6V, 10V | 4.2 mOhm @ 50A, 10V | 3.5V @ 150µA | 117nC @ 10V | ±20V | - |