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- Part Status :
- Supplier Device Package :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 500V 9A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | TO-252, (D-Pak) | N-Channel | 650V | 434pF @ 100V | 89W (Tc) | 7A (Tc) | 10V | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | - | |||||
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Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | SOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-26 | N-Channel | 100V | 497pF @ 50V | 1.1W (Ta) | 1.6A (Ta) | 4.3V, 10V | 230 mOhm @ 1.6A, 10V | 3V @ 250µA | 9.2nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 100V 2.6A TSOT26 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-252-3 | N-Channel | 40V | 453pF @ 20V | 2.12W (Ta) | 8.5A (Ta) | 4.5V, 10V | 36 mOhm @ 12A, 10V | 3V @ 250µA | 9.2nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 600V 50MA SC59 | SOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-26 | N-Channel | 30V | 404pF @ 15V | 1.12W (Ta) | 5.3A (Ta) | 4.5V, 10V | 27 mOhm @ 7A, 10V | 2V @ 250µA | 9.2nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET P-CH 100V 9A TO252 | SOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-26 | N-Channel | 100V | 497pF @ 50V | 1.1W (Ta) | 1.6A (Ta) | 4.3V, 10V | 230 mOhm @ 1.6A, 10V | 3V @ 250µA | 9.2nC @ 10V | ±20V | - | |||||
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Diodes Incorporated | MOSFET N-CH 20V 5.47A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | N-Channel | 30V | 386pF @ 15V | 720mW (Ta) | 5.8A (Ta) | 3V, 10V | 28 mOhm @ 5.8A, 10V | 2V @ 250µA | 9.2nC @ 10V | ±20V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | TO-263 (D²Pak) | N-Channel | 650V | 434pF @ 100V | 104W (Tc) | 7A (Tc) | 10V | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | - | |||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO252 | TO-252-3, DPak (2 Leads + Tab), SC-63 | aMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | TO-252, (D-Pak) | N-Channel | 650V | 434pF @ 100V | 89W (Tc) | 7A (Tc) | 10V | 650 mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2nC @ 10V | ±30V | - |