- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 25V 50A TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 25V | 2390pF @ 15V | 71W (Tc) | 50A (Tc) | 4.5V, 10V | 6 mOhm @ 50A, 10V | 2V @ 30µA | 19nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 11.5A LL 8MLP | 8-PowerWDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-MLP (3.3x3.3) | N-Channel | 30V | 2141pF @ 15V | 900mW (Ta), 2.1W (Tc) | 11.5A (Ta) | 4.5V, 10V | 10.5 mOhm @ 11.5A, 10V | 3V @ 250µA | 19nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SOIC | N-Channel | 30V | 1293pF @ 15V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 11 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 5V | ±20V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 11.5A LL 8MLP | 8-PowerWDFN | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-MLP (3.3x3.3) | N-Channel | 30V | 2141pF @ 15V | 900mW (Ta), 2.1W (Tc) | 11.5A (Ta) | 4.5V, 10V | 10.5 mOhm @ 11.5A, 10V | 3V @ 250µA | 19nC @ 5V | ±20V | - | |||||
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | SOT-23-6 Thin, TSOT-23-6 | U-MOSIII | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Obsolete | VS-6 (2.9x2.8) | P-Channel | 20V | 1430pF @ 10V | 700mW (Ta) | 5.5A (Ta) | 1.8V, 4.5V | 40 mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | ±8V | - | |||||
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ON Semiconductor | MOSFET N-CH 30V 12A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | PowerTrench® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | 8-SOIC | N-Channel | 30V | 1293pF @ 15V | 2.5W (Ta) | 12A (Ta) | 4.5V, 10V | 11 mOhm @ 12A, 10V | 3V @ 250µA | 19nC @ 5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 30A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 30V | 695pF @ 25V | 42W (Tc) | 30A (Tc) | 4.5V, 10V | 20 mOhm @ 15A, 10V | 2V @ 25µA | 19nC @ 5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 25V 50A TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 | OptiMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | PG-TO252-3 | N-Channel | 25V | 2390pF @ 15V | 71W (Tc) | 50A (Tc) | 4.5V, 10V | 6 mOhm @ 50A, 10V | 2V @ 30µA | 19nC @ 5V | ±20V | - |