- Package / Case :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Panasonic Electronic Components | MOSFET N-CH 30V 12A 8HSSO | 4-XFLGA, CSP | - | - | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 85°C (TA) | Active | XLGA004-W-0808-RA01 | N-Channel | 12V | 275pF @ 10V | 360mW (Ta) | 3.4A (Ta) | 1.5V, 4.5V | 30 mOhm @ 1.5A, 4.5V | 1V @ 236µA | 5.8nC @ 4.5V | ±8V | - | ||||
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Diodes Incorporated | MOSFET N-CHA 60V 9.2A SO8 | SOT-23-6 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-6 | P-Channel | 20V | 320pF @ 15V | 1.1W (Ta) | 2.3A (Ta) | 2.7V, 4.5V | 200 mOhm @ 1.6A, 4.5V | 700mV @ 250µA | 5.8nC @ 4.5V | ±12V | - | |||||
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Diodes Incorporated | MOSFET P-CH 30V 4.3A SOT-26 | 3-XFDFN | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X2-DFN1010-3 | P-Channel | 12V | 514pF @ 5V | 480mW (Ta) | 2A (Ta) | 1.5V, 4.5V | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 5.8nC @ 4.5V | ±8V | - | |||||
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NXP USA Inc. | MOSFET N-CH 20V 5.9A SOT-23 | TO-236-3, SC-59, SOT-23-3 | TrenchMOS™ | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | TO-236AB (SOT23) | N-Channel | 20V | 410pF @ 20V | 280mW (Tj) | 5.9A (Tc) | 2.5V, 4.5V | 37 mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 5.8nC @ 4.5V | ±12V | - |