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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max)
QM6214S
RFQ
Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8 TrenchFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PowerPAK® SO-8 P-Channel 20V - 1.8W (Ta) 12.5A (Ta) 1.8V, 4.5V 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V ±8V
QM3002U
RFQ
Vishay Siliconix MOSFET P-CH 30V 14A PPAK SO-8 TrenchFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PowerPAK® SO-8 P-Channel 20V - 1.8W (Ta) 12.5A (Ta) 1.8V, 4.5V 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V ±8V
SI7485DP-T1-GE3
RFQ
Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8 TrenchFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PowerPAK® SO-8 P-Channel 20V - 1.8W (Ta) 12.5A (Ta) 1.8V, 4.5V 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V ±8V
SI7485DP-T1-E3
RFQ
Vishay Siliconix MOSFET P-CH 20V 12.5A PPAK SO-8 TrenchFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PowerPAK® SO-8 P-Channel 20V - 1.8W (Ta) 12.5A (Ta) 1.8V, 4.5V 7.3 mOhm @ 20A, 4.5V 900mV @ 1mA 150nC @ 5V ±8V
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