- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs(th) (Max) @ Id :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET N-CH 60V 3.1A SOT223 | 8-VDFN Exposed Pad | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-MLP, MicroFET (3x2) | N-Channel | 30V | 314pF @ 15V | 1W (Ta) | 2A (Ta) | 2.5V, 4.5V | 180 mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 2.9nC @ 4.5V | ±12V | Schottky Diode (Isolated) | ||||||
|
Diodes Incorporated | MOSFET P-CH 20V 2.9A 8DFN | 6-UFBGA, WLBGA | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | U-WLB1510-6 | P-Channel | 20V | 210pF @ 10V | 920mW (Ta) | 2.5A (Ta) | 1.5V, 4.5V | 70 mOhm @ 1A, 4.5V | 1V @ 250µA | 2.9nC @ 4.5V | ±8V | - | ||||||
|
Diodes Incorporated | MOSFET N-CH 100V 1A SOT-89 | TO-236-3, SC-59, SOT-23-3 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | P-Channel | 60V | 219pF @ 30V | 625mW (Ta) | 900mA (Ta) | 4.5V, 10V | 400 mOhm @ 900mA, 10V | 3V @ 250µA | 2.9nC @ 4.5V | ±20V | - | ||||||
|
Infineon Technologies | MOSFET P-CH 20V 2.6A SOT23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | P-Channel | 20V | 220pF @ 16V | 1.3W (Ta) | 2.6A (Ta) | 2.5V, 4.5V | 135 mOhm @ 2.6A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | ±12V | - | ||||||
|
Infineon Technologies | MOSFET N-CH 30V 3.4A SOT23 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | N-Channel | 30V | 270pF @ 24V | 1.3W (Ta) | 3.4A (Ta) | 2.5V, 4.5V | 63 mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | ±12V | - | ||||||
|
ON Semiconductor | MOSFET N-CH 20V 2A MCPH3 | 3-SMD, Flat Leads | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | SC-70FL/MCPH3 | N-Channel | 20V | 175pF @ 10V | 800mW (Ta) | 2A (Ta) | 1.2V, 4.5V | 104 mOhm @ 1A, 4.5V | - | 2.9nC @ 4.5V | ±9V | - | ||||||
|
ON Semiconductor | MOSFET N-CH 20V 2A MCPH3 | 3-SMD, Flat Leads | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | SC-70FL/MCPH3 | N-Channel | 20V | 175pF @ 10V | 800mW (Ta) | 2A (Ta) | 1.2V, 4.5V | 104 mOhm @ 1A, 4.5V | 900mV @ 1mA | 2.9nC @ 4.5V | ±9V | - | ||||||
|
NXP USA Inc. | MOSFET N-CH 30V 1.5A SOT323 | SC-70, SOT-323 | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-323-3 | N-Channel | 30V | 170pF @ 15V | 270mW (Ta), 1.92W (Tc) | 1.5A (Ta) | 2.5V, 4.5V | 97 mOhm @ 1.5A, 4.5V | 1.5V @ 250µA | 2.9nC @ 4.5V | ±12V | - |