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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
MTV332GG A4
Per Unit
$0.7887
RFQ
ON Semiconductor NMOS PWR56 100V 5.8 MOHM 8-PowerTDFN Automotive, AEC-Q101, PowerTrench® - MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-DFN (5.1x6.3) N-Channel 100V 2220pF @ 50V 214W (Ta) 80A (Tc) 10V 6.4 mOhm @ 80A, 10V 4V @ 250µA 43nC @ 10V ±20V -
ME6206A33M
Per Unit
$0.6848
RFQ
ON Semiconductor PMOS PWR56 40V 8 MOHM 8-PowerTDFN Automotive, AEC-Q101, PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 8-DFN (5.1x6.3) P-Channel 40V 3360pF @ 20V 107W (Tj) 65A (Tc) 4.5V, 10V 8 mOhm @ 65A, 10V 3V @ 250µA 67nC @ 10V ±16V -
ME331C1MG
Per Unit
$0.4377
RFQ
ON Semiconductor PT8P 40V LL PQFN56 8-PowerTDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 8-DFN (5.1x6.3) P-Channel 40V 2320pF @ 20V 75W (Tj) 50A (Tc) 4.5V, 10V 13.5 mOhm @ 50A, 10V 3V @ 250µA 37nC @ 10V ±16V -
FDWS9510L-F085
Per Unit
$0.4377
RFQ
ON Semiconductor PT8P 40V LL PQFN56 8-PowerTDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active 8-DFN (5.1x6.3) P-Channel 40V 2320pF @ 20V 75W (Tj) 50A (Tc) 4.5V, 10V 13.5 mOhm @ 50A, 10V 3V @ 250µA 37nC @ 10V ±16V -
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