- Operating Temperature :
- Part Status :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 11550pF @ 25V (2)
- 1707pF @ 100V (4)
- 2000pF @ 100V (2)
- 2010pF @ 25V (1)
- 2100pF @ 25V (2)
- 2150pF @ 25V (2)
- 2297pF @ 25V (4)
- 2660pF @ 100V (2)
- 2826pF @ 25V (1)
- 2990pF @ 380V (2)
- 3094pF @ 100V (2)
- 3330pF @ 100V (3)
- 3454pF @ 100V (2)
- 3459pF @ 100V (2)
- 3508pF @ 100V (3)
- 3590pF @ 380V (2)
- 4560pF @ 100V (1)
- 5120pF @ 25V (2)
- 5623pF @ 400V (1)
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 125 mOhm @ 14.5A, 10V (2)
- 130 mOhm @ 14A, 10V (2)
- 170 mOhm @ 13A, 10V (4)
- 2.8 mOhm @ 100A, 10V (2)
- 220 mOhm @ 11.5A, 10V (1)
- 250 mOhm @ 10A, 10V (2)
- 250 mOhm @ 11A, 10V (2)
- 31 mOhm @ 32.6A, 10V (1)
- 370 mOhm @ 8A, 10V (1)
- 380 mOhm @ 7A, 10V (3)
- 400 mOhm @ 5.5A, 10V (1)
- 440 mOhm @ 5.5A, 10V (1)
- 50 mOhm @ 23A, 10V (2)
- 550 mOhm @ 6A, 10V (2)
- 650 mOhm @ 6A, 10V (1)
- 720 mOhm @ 6A, 10V (2)
- 98 mOhm @ 16.5A, 10V (2)
- 99 mOhm @ 14.5A, 10V (3)
- 99 mOhm @ 16.5A, 10V (3)
- 99 mOhm @ 18.1A, 10V (2)
- 99 mOhm @ 18A, 10V (1)
- Applied Filters :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Alpha Omega Semiconductor Inc. | MOSFET N-CH 100V 22A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220 | N-Channel | 500V | 2297pF @ 25V | 278W (Tc) | 14A (Tc) | 10V | 380 mOhm @ 7A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | TO-247-3 | E | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 600V | 3508pF @ 100V | 278W (Tc) | 33A (Tc) | 10V | 99 mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 17A TO247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 500V | 3094pF @ 100V | 278W (Tc) | 20A (Tc) | 10V | 250 mOhm @ 10A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 8A TO-262 | TO-220-3 | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 400V | 1707pF @ 100V | 278W (Tc) | 25A (Tc) | 10V | 170 mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | |||||
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Vishay Siliconix | MOSFET N-CHAN 600V | TO-247-3 | E | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 600V | 3459pF @ 100V | 278W (Tc) | 51A (Tc) | 10V | 50 mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET E SERIES 600V TO247AC | TO-220-3 | E | - | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 600V | 3459pF @ 100V | 278W (Tc) | 51A (Tc) | 10V | 50 mOhm @ 23A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 600V | 3454pF @ 100V | 278W (Tc) | 33A (Tc) | 10V | 98 mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 400V | 1707pF @ 100V | 278W (Tc) | 25A (Tc) | 10V | 170 mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 33A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 600V | 3454pF @ 100V | 278W (Tc) | 33A (Tc) | 10V | 98 mOhm @ 16.5A, 10V | 4V @ 250µA | 155nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 650V 28A TO-220AB | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 600V | 3508pF @ 100V | 278W (Tc) | 33A (Tc) | 10V | 99 mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 900V 6.7A TO-247AC | TO-220-3 | - | Bulk | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 600V | 3508pF @ 100V | 278W (Tc) | 33A (Tc) | 10V | 99 mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 900V 1.9A TO220FP | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 400V | 1707pF @ 100V | 278W (Tc) | 25A (Tc) | 10V | 170 mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 30A TO-247AC | TO-247-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247AC | N-Channel | 500V | 3094pF @ 100V | 278W (Tc) | 20A (Tc) | 10V | 250 mOhm @ 10A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 150V 128A TO220AB | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220AB | N-Channel | 400V | 1707pF @ 100V | 278W (Tc) | 25A (Tc) | 10V | 170 mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | ||||
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Infineon Technologies | MOSFET N-CH 600V TO247-4 | TO-247-4 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-4 | N-Channel | 600V | 3330pF @ 100V | 278W (Tc) | 37.9A (Tc) | 10V | 99 mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO262-3-1 | N-Channel | 80V | 11550pF @ 25V | 278W (Tc) | 120A (Tc) | 10V | 2.8 mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | TO-247-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 600V | 3330pF @ 100V | 278W (Tc) | 37.9A (Tc) | 10V | 99 mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V TO220-3 | TO-220-3 | CoolMOS™ P6 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO-220-3 | N-Channel | 600V | 3330pF @ 100V | 278W (Tc) | 37.9A (Tc) | 10V | 99 mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | TO-247-3 | CoolMOS™ CFD7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO247-3 | N-Channel | 650V | 5623pF @ 400V | 278W (Tc) | 63A (Tc) | 10V | 31 mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V 37.9A TO247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO247-3 | N-Channel | 600V | 2660pF @ 100V | 278W (Tc) | 37.9A (Tc) | 10V | 99 mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH 600V 37.9A TO220 | TO-220-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Not For New Designs | PG-TO-220-3 | N-Channel | 600V | 2660pF @ 100V | 278W (Tc) | 37.9A (Tc) | 10V | 99 mOhm @ 18.1A, 10V | 3.5V @ 1.21mA | 119nC @ 10V | ±20V | ||||
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Infineon Technologies | MOSFET N-CH TO220-3 | TO-220-3 | Automotive, AEC-Q101, OptiMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Active | PG-TO220-3-1 | N-Channel | 80V | 11550pF @ 25V | 278W (Tc) | 120A (Tc) | 10V | 2.8 mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | ||||
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Microsemi Corporation | MOSFET N-CH 600V 38A TO-247 | TO-247-3 | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 [B] | N-Channel | 600V | 2826pF @ 25V | 278W (Tc) | 38A (Tc) | 10V | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 112nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 500V 22A TO-3P | TO-3P-3, SC-65-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-3P | N-Channel | 500V | 5120pF @ 25V | 278W (Tc) | 22A (Tc) | 10V | 250 mOhm @ 11A, 10V | 4V @ 250µA | 236nC @ 10V | ±30V | ||||
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ON Semiconductor | MOSFET N-CH 800V 23A | TO-220-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 800V | 4560pF @ 100V | 278W (Tc) | 23A (Tc) | 10V | 220 mOhm @ 11.5A, 10V | 4.5V @ 2.3mA | 105nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 600V 28A TO247 | TO-247-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 600V | 3590pF @ 380V | 278W (Tc) | 28A (Tc) | 10V | 130 mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 600V 29A TO247 | TO-247-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-247 | N-Channel | 600V | 2990pF @ 380V | 278W (Tc) | 29A (Tc) | 10V | 125 mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 600V 28A TO220 | TO-220-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 600V | 3590pF @ 380V | 278W (Tc) | 28A (Tc) | 10V | 130 mOhm @ 14A, 10V | 3.5V @ 250µA | 70nC @ 10V | ±20V | ||||
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ON Semiconductor | MOSFET N-CH 600V 29A TO220 | TO-220-3 | SuperFET® II | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-220-3 | N-Channel | 600V | 2990pF @ 380V | 278W (Tc) | 29A (Tc) | 10V | 125 mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95nC @ 10V | ±20V | ||||
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Alpha Omega Semiconductor Inc. | MOSFET N-CHANNEL 600V 11A TO220 | TO-220-3 | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | TO-220 | N-Channel | 600V | 2000pF @ 100V | 278W (Tc) | 11A (Tc) | 10V | 440 mOhm @ 5.5A, 10V | 5V @ 250µA | 42nC @ 10V | ±30V |