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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
STF13NM60N-H
RFQ
STMicroelectronics MOSFET N-CH 600V 11A TO-220FP TO-220-3 Full Pack MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP N-Channel 600V 790pF @ 50V 25W (Tc) 11A (Tc) 10V 360 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V ±25V -
STF13NM50N
RFQ
STMicroelectronics MOSFET N-CH 500V 12A TO-220FP TO-220-3 Full Pack MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220FP N-Channel 500V 960pF @ 50V 25W (Tc) 12A (Tc) 10V 320 mOhm @ 6A, 10V 4V @ 250µA 30nC @ 10V ±25V -
STF12NM50N
RFQ
STMicroelectronics MOSFET N-CH 500V 11A TO220FP TO-220-3 Full Pack MDmesh™ II Tube MOSFET (Metal Oxide) Through Hole 150°C (TJ) Obsolete TO-220FP N-Channel 500V 940pF @ 50V 25W (Tc) 11A (Tc) 10V 380 mOhm @ 5.5A, 10V 4V @ 250µA 30nC @ 10V ±25V -
STP11NM60FP
RFQ
STMicroelectronics MOSFET N-CH 600V 11A TO220FP TO-220-3 Full Pack MDmesh™ Tube MOSFET (Metal Oxide) Through Hole -55°C ~ 150°C (TJ) Obsolete TO-220FP N-Channel 600V 1000pF @ 25V 35W (Tc) 11A (Tc) 10V 450 mOhm @ 5.5A, 10V 5V @ 250µA 30nC @ 10V ±30V -
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