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Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
TPCA8023-H(TE12LQM
RFQ
Toshiba Semiconductor and Storage MOSFET N-CH 30V 20A SOP-8 ADV 8-PowerVDFN - MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete 8-SOP Advance (5x5) N-Channel 30V 2150pF @ 10V 1.6W (Ta), 30W (Tc) 21A (Ta) 4.5V, 10V 12.9 mOhm @ 11A, 10V 2.5V @ 1mA 21nC @ 10V ±20V -
TPCA8011-H(TE12LQM
RFQ
Toshiba Semiconductor and Storage MOSFET N-CH 20V 40A SOP-8 ADV 8-PowerVDFN U-MOSIII-H MOSFET (Metal Oxide) Surface Mount 150°C (TJ) Obsolete 8-SOP Advance (5x5) N-Channel 20V 2900pF @ 10V 1.6W (Ta), 45W (Tc) 40A (Ta) 2.5V, 4.5V 3.5 mOhm @ 20A, 4.5V 1.3V @ 200µA 32nC @ 5V ±12V -
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