- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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ROHM Semiconductor | MOSFET P-CH 12V 2A WEMT6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | P-Channel | 45V | 550pF @ 10V | 850mW (Ta), 15W (Tc) | 4.5A (Tc) | 4V, 10V | 155 mOhm @ 4.5A, 10V | 3V @ 1mA | 12nC @ 5V | ±20V | |||||
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ROHM Semiconductor | MOSFET N-CH 200V 3A CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | N-Channel | 45V | 950pF @ 10V | 20W (Tc) | 20A (Ta) | 4V, 10V | 28 mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V | |||||
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ROHM Semiconductor | MOSFET P-CH 12V 2A WEMT6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | P-Channel | 45V | 550pF @ 10V | 850mW (Ta), 15W (Tc) | 4.5A (Tc) | 4V, 10V | 155 mOhm @ 4.5A, 10V | 3V @ 1mA | 12nC @ 5V | ±20V | |||||
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ROHM Semiconductor | MOSFET N-CH 200V 3A CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Not For New Designs | CPT3 | N-Channel | 45V | 950pF @ 10V | 20W (Tc) | 20A (Ta) | 4V, 10V | 28 mOhm @ 20A, 10V | 2.5V @ 1mA | 12nC @ 5V | ±20V |