- Part Status :
- FET Type :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
27 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Vishay Siliconix | MOSFET P-CH 60V 1.6A 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 600V | 350pF @ 25V | 1W (Ta) | 320mA (Ta) | 10V | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 400V 350MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 400V | 410pF @ 25V | 1W (Ta) | 490mA (Ta) | 10V | 1.8 Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 400V | 170pF @ 25V | 1W (Ta) | 350mA (Ta) | 10V | 3.6 Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 200V 3.5A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | P-Channel | 200V | 170pF @ 25V | 1W (Ta) | 400mA (Ta) | 10V | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 200V 1.8A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 60V 600MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 140pF @ 25V | 1W (Ta) | 600mA (Ta) | 10V | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 100V 4A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | P-Channel | 200V | 340pF @ 25V | 1W (Ta) | 560mA (Ta) | 10V | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 220V 8.4A 1212-8 | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 140pF @ 25V | 1W (Ta) | 450mA (Ta) | 10V | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 7A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 600V | 350pF @ 25V | 1W (Ta) | 320mA (Ta) | 10V | 4.4 Ohm @ 190mA, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 100V 7.2A TO220FP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 260pF @ 25V | 1W (Ta) | 630mA (Ta) | 10V | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 400V 6A TO-220 FPAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 260pF @ 25V | 1W (Ta) | 630mA (Ta) | 10V | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 30V 50A POWERPAKSO-8 | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 140pF @ 25V | 1W (Ta) | 450mA (Ta) | 10V | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 4.5A D2PAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 3.1A TO220FP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 400V | 410pF @ 25V | 1W (Ta) | 490mA (Ta) | 10V | 1.8 Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 100V 12A D2PAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | P-Channel | 200V | 340pF @ 25V | 1W (Ta) | 560mA (Ta) | 10V | 1.5 Ohm @ 340mA, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 1.4A I-PAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 400V | 170pF @ 25V | 1W (Ta) | 350mA (Ta) | 10V | 3.6 Ohm @ 210mA, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 60V 5.1A DPAK | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | P-Channel | 200V | 170pF @ 25V | 1W (Ta) | 400mA (Ta) | 10V | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 600V 2.2A TO-220AB | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 40V 10.5A 1212-8 | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 140pF @ 25V | 1W (Ta) | 600mA (Ta) | 10V | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 500V 370MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 500V | 360pF @ 25V | 1W (Ta) | 370mA (Ta) | 10V | 3 Ohm @ 220mA, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 400V 490MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 400V | 410pF @ 25V | 1W (Ta) | 490mA (Ta) | 10V | 1.8 Ohm @ 210mA, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET P-CH 200V 0.4A 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | P-Channel | 200V | 170pF @ 25V | 1W (Ta) | 400mA (Ta) | 10V | 3 Ohm @ 240mA, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 260pF @ 25V | 1W (Ta) | 800mA (Ta) | 10V | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 200V 600MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Obsolete | 4-DIP, Hexdip, HVMDIP | N-Channel | 200V | 140pF @ 25V | 1W (Ta) | 600mA (Ta) | 10V | 1.5 Ohm @ 360mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 250V 630MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 260pF @ 25V | 1W (Ta) | 630mA (Ta) | 10V | 1.1 Ohm @ 380mA, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | ||||
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Vishay Siliconix | MOSFET N-CH 250V 450MA 4-DIP | 4-DIP (0.300", 7.62mm) | - | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | 4-DIP, Hexdip, HVMDIP | N-Channel | 250V | 140pF @ 25V | 1W (Ta) | 450mA (Ta) | 10V | 2 Ohm @ 270mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V |