- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MT | N-Channel | 30V | 6140pF @ 15V | 2.8W (Ta), 89W (Tc) | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 30V 30A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MT | N-Channel | 30V | 5640pF @ 15V | 2.8W (Ta), 89W (Tc) | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2 mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | ±20V | - | ||||||
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Infineon Technologies | MOSFET N-CH 40V 23A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MT | N-Channel | 40V | 5950pF @ 15V | 2.8W (Ta), 89W (Tc) | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4 mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | ±20V | - |