- Package / Case :
- Series :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- FET Feature :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Infineon Technologies | MOSFET N-CH 800V COOLMOS TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 350pF @ 500V | 45W (Tc) | 6A (Tc) | 10V | 900 mOhm @ 2.2A, 10V | 3.5V @ 110µA | 15nC @ 10V | ±20V | - | ||||
|
|
Infineon Technologies | MOSFET N-CH 800V 4A IPAK-SL | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | - | 32W (Tc) | 4A (Tc) | 10V | 1.4 Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10nC @ 10V | ±20V | Super Junction | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 8A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 570pF @ 500V | 60W (Tc) | 8A (Tc) | 10V | 600 mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 8A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 570pF @ 500V | 60W (Tc) | 8A (Tc) | 10V | 600 mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 7A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 460pF @ 500V | 51W (Tc) | 7A (Tc) | 10V | 750 mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 7A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 460pF @ 500V | 51W (Tc) | 7A (Tc) | 10V | 750 mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 4.5A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 300pF @ 500V | 37W (Tc) | 4.5A (Tc) | 10V | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 4.5A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 300pF @ 500V | 37W (Tc) | 4.5A (Tc) | 10V | 1.2 Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 2.5A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 150pF @ 500V | 22W (Tc) | 2.5A (Tc) | 10V | 2.4 Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 2.5A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 150pF @ 500V | 22W (Tc) | 2.5A (Tc) | 10V | 2.4 Ohm @ 800mA, 10V | 3.5V @ 40µA | 7.5nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 3A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 175pF @ 500V | 24W (Tc) | 3A (Tc) | 10V | 2 Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 3A TO251-3 | TO-251-3 Stub Leads, IPak | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 175pF @ 500V | 24W (Tc) | 3A (Tc) | 10V | 2 Ohm @ 940mA, 10V | 3.5V @ 50µA | 9nC @ 10V | ±20V | - | ||||
|
|
|
Infineon Technologies | MOSFET N-CH 800V 1.9A TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA | CoolMOS™ P7 | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 800V | 120pF @ 500V | 18W (Tc) | 1.9A (Tc) | 10V | 3.3 Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8nC @ 10V | ±20V | - |