- Package / Case :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 700V 5.4A IPAK | TO-251-3 Short Leads, IPak, TO-251AA | - | Tube | MOSFET (Metal Oxide) | Through Hole | -40°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 700V | 225pF @ 100V | 53W (Tc) | 5.4A (Tc) | 10V | 1.4 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | - | ||||
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Infineon Technologies | MOSFET N-CH 650V 3.2A TO-251 | TO-251-3 Stub Leads, IPak | CoolMOS™ | Tube | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | PG-TO251-3 | N-Channel | 650V | 225pF @ 100V | 28W (Tc) | 3.2A (Tc) | 10V | 1.4 Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | - |