- Package / Case :
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- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Drive Voltage (Max Rds On, Min Rds On) :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Feature | |
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Infineon Technologies | MOSFET N-CH 100V 10A PQFN | 8-PowerTDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3x3) | N-Channel | 100V | 760pF @ 50V | 2.8W (Ta), 29W (Tc) | 3.2A (Ta), 20A (Tc) | 10V | 115 mOhm @ 6.3A, 10V | 4V @ 35µA | 26nC @ 10V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 16A 8PQFN | 8-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3x3) | N-Channel | 30V | 1510pF @ 15V | 2.8W (Ta) | 16A (Ta), 42A (Tc) | 4.5V, 10V | 7.1 mOhm @ 16A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 12A PQFN56 | 8-PowerVDFN | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3x3) | N-Channel | 30V | 755pF @ 15V | 2.8W (Ta) | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4 mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | ±20V | - | |||||
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Infineon Technologies | MOSFET N-CH 30V 16A 8PQFN | 8-PowerVDFN | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-PQFN (3x3) | N-Channel | 30V | 1510pF @ 15V | 2.8W (Ta) | 16A (Ta), 42A (Tc) | 4.5V, 10V | 7.1 mOhm @ 16A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | - |