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Input Capacitance (Ciss) (Max) @ Vds :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
0 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package FET Type Drain to Source Voltage (Vdss) Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) FET Feature
P89V51RB2BBC
RFQ
ON Semiconductor MOSFET P-CH 20V 6.8A 8MICROFET 8-PowerWDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-MLP, MicroFET (3x1.9) P-Channel 20V 2960pF @ 10V 1.9W (Ta) 6.8A (Ta) 1.8V, 4.5V 30 mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30nC @ 4.5V ±8V -
P5CC072ETS/TOPE825
RFQ
ON Semiconductor MOSFET P-CH 20V 6.1A MICROFET8 8-PowerWDFN PowerTrench® MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-MLP, MicroFET (3x1.9) P-Channel 20V 2085pF @ 10V 1.9W (Ta) 6.1A (Ta) 1.8V, 4.5V 35 mOhm @ 6.1A, 4.5V 1V @ 250µA 59nC @ 10V ±8V -
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