- Series :
- Input Capacitance (Ciss) (Max) @ Vds :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
0 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | |
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Infineon Technologies | MOSFET N-CH 100V 77A DIRECTFET2 | DirectFET™ Isometric SB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | N-Channel | 100V | 515pF @ 25V | 2.4W (Ta), 30W (Tc) | 4.1A (Ta), 14.4A (Tc) | 10V | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 60V 77A DIRECTFET-S2 | DirectFET™ Isometric SB | HEXFET® | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | N-Channel | 60V | 450pF @ 25V | 2.4W (Ta), 30W (Tc) | 5.8A (Ta), 21A (Tc) | 10V | 36 mOhm @ 13A, 10V | 5V @ 25µA | 11nC @ 10V | ±20V | |||||
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Infineon Technologies | MOSFET N-CH 100V DIRECTFET SB | DirectFET™ Isometric SB | - | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | DIRECTFET SB | N-Channel | 100V | 515pF @ 25V | 2.4W (Ta), 30W (Tc) | 4.1A (Ta), 14.4A (Tc) | 10V | 62 mOhm @ 8.9A, 10V | 5V @ 25µA | 13nC @ 10V | ±20V |